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features applications ? increases proximity detection range of e909.05/e909.06 by a factor of 5 (*) ? improves signal to noise ratio by a factor of 3 ? optical receiver with high sensitivity (limiting output): total transimpedance typ. 422m ? integrated op-amp for buffering, gain or additional active fltering ? very low phase shift in input overdrive ? high ambient light suppression up to photo currents of 10ma ? signal bandwidth up to 500khz ? no current consumption in standby mode ? automotive qualifed according to aec-q100 (*) in systems with highly focused ir beams and optimized optical sensor surfaces ? optical receivers ? transimpedance amplifers ? multiplex function for channel expander of the chip set e909.05/e909.06 general description the optical receiver device consists of a frst stage tran - simpedance amplifer (tia) with differential input, lim - iting amplifers with integrated high pass flter charac - teristics and differential outputs outp_la / outn_la and a secondary linear output out. a very high sensitivity equivalent to a transimpedance resistance of typ. 422m is achieved at the limiting outputs. by using a limiting amplifer no phase shift oc - curs if the input is overdriven. ambient light equivalent to a constant photo current up to 10ma is suppressed with an integrated gyrator. together with the halios? chip set e909.05/e909.06 motion detectors a detection range of several meters can be realized. by switching the output to high im - pedance state several optical receivers can be multi - plexed to the input of a halios? multi-purpose sensor ic e909.05/e909.06. e909.07 e909.06 halios ? sensor ic limiting amplifier avdd avdd avdd_la gvdd c ghs gyrator inn inp a amp out gain_ctrl outp_la agnd agnd_la ggnd avdd/2 io_ctrl - + - + gyrator gls c gls c ghs c vdd r vdd c inp c inn d p outn_la an ka gpio_1 gpio_2 on_la on ordering information ordering no.: temp. range amb package E90907a52c -40c to +105c qfn20l4 e909.07 elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. transimpedance amplifier with high sensitivity production data - mar 25, 2014 1/13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 1 package and pinout 1.1 pin description no name type description 1 inn a_i negative input of transimpedance amplifier (tia) 2 inp a_i positive input of transimpedance amplifier (tia) 3 a a_io anode of photodiode connected to high side gyrator 4 gls a_io low pass frequency control (to ggnd) 5 ghs a_io high pass frequency control (to gvdd) 6 gvdd s supply gyrator 7 ggnd s ground gyrator 8 amp a_io output of tia or input of limiting amplifier (la) controlled by io_ctrl 9 gain_ctrl d_i controls gain of la, integrated pull down 10 on_la d_i enabling output of la , active hi, integrated pull-down 11 outp_la a_o positive output limiting amplifier 12 outn_la a_o negative output limiting amplifier 13 on d_i activation signal for amplifier-ic, active hi, integrated pull-down 14 out a_o output of opamp 15 avdd_la s supply limiting amplifier (la) 16 agnd_la s ground limiting amplifier (la) 17 io_ctrl d_i controls the input of the limiting amplifier, integrated pull down 18 avdd s supply transimpedance amplifier (tia) and inverting amplifier 19 agnd s analogue ground 20 c a_io cathode of photodiode connected to low side gyrator 21 ep s exposed die pad table 1: pin description explanation of types: a = analogue, d = digital, s = supply, i = input, o = output, b = bidirectional, hv = high voltage when connecting the supply pins the requirements of the entire system has to be taken into account. for highest sensitive it is recommended to use a separate rc filter for every supply input. the ground pins ggnd, agnd_la and agnd must be soldered together in any application! pin ep, io_ctrl and gain_ctrl must be soldered to ground or vdd. see chapter 5.7 elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 2 of 13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 1.2 package reference the device is available in a pb free, rohs compliant, 20-lead quad flat no lead qfn20l4 package with 16mm2 (0.024 square inch) according to jedec standard mo-220- k ; variant: vggd-5. 1.3 package pinout fig. 2: package pinout e909.07 (top view) elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 3 of 13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 2 block diagram fig. 3: block diagram e909.07 elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 4 of 13 inn inp gyrator gyrator ghs gls c a gvdd ggnd avdd 2 outp_la outn_la amp on_la out agnd avdd on agnd_la avdd_la linear amplifier transimpedance amplifier io_ctrl gain_ctrl limiting amplifier
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 3 operating conditions 3.1 absolute maximum ratings ? operating the device at or beyond these limits may cause permanent damage. ? all voltages are referred to ground (0v). ? currents flowing into the circuit have positive values. no. description condition symbol min max unit 1 negative supply voltage agnd, ggnd, agnd_la 00v 2 positive supply voltage avdd, gvdd, avdd_la -0,3 +3,6 v 3 voltage digital i/o pins: on, on_la, io_ctrl, gain_ctrl v(dpin) -0,3 avdd + 0,3 v 4 input current at digital pins: on_la, io_ctrl, gain_ctrl i(dpin) -10 10 ma 5 voltage at analogue pins v(apin) -0,3 avdd + 0,3 v 6 input current at analogue pins i(apin) -100 100 ma 7 junction temperature t j -40 +125 c 8 ambient temperature packaged devices t a -40 +105 c 9 storage temperature t stg -40 +150 c 10 power dissipation t a 85c p tot 150 mw table 2: absolute maximum ratings elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 5 of 13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 3.2 recommended operating conditions ? parameters are guaranteed within the range of re commended operating conditions unless otherwise specified. ? all voltages are referred to ? ground (0v). ? currents flowing into the circuit have positive values. no. description condition symbol min typ max unit 1 positive supply voltage avdd, gvdd 3.0 3.3 3.5 v 2 vdd filter and buffer capacitor low-esr type c vdd 10 f 3 input coupling capacitors c inn = c inp c inn , c inp 0.22 0.47 10 nf 4 gyrator coupling capacitors c gls = c ghs c gls , c ghs 10 47 220 nf 5 capacitive load at output out c load, out 100 pf 6 capacitive load at output amp c load, amp 100 pf 7 capacitive load at pin outp_la, outn_la c load, outx_la 100 pf 8 junction temperature normal operation t j -40 +105 c 9 thermal resistance, junction to ambient qfn20l4 r t,j-a 45 c/w 10 vdd filter resistor r vdd 10 20 ? 11 capacitance of photo diode at input c / a c diode 70 250 pf table 3: recommended operating conditions 4 detailed electrical specification 4.1 supply no. description condition symbol min typ max unit 1 supply current 1), 2) on = avdd, on_la = avdd, i c = i a = 0ma, i vdd 3.5 5.0 ma 2 average supply current 1), 3), 4) on = avdd, on_la = avdd, i c = i a = 0ma, i vdd,av 0.23 ma 3 sleep mode supply current 1), 2) on = 0v, on_la = 0v, i vdd,sleep 1a table 4: electrical parameters supply 1) average current from photodiode pd negligible 2) total supply current to avdd, avdd_la and gvdd i vdd = i avdd + i avdd_la + i gvdd 3) power consumption calculation sample rate: 10ms settling time t sw : 500s measurement time: 250s duty cycle: (500s + 250s)/10ms ~ 1/13 i vdd,av = 5ma * duty cycle ~ 385a 4) not tested in production test elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 6 of 13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 4.2 transimpedance amplifier no. description condition symbol min typ max unit 1 internal feedback resistance of tia measured from inn to amp r tia 75 100 125 k ? 2 input impedance inp r inp 75 100 125 k ? 3 maximum output voltage (tia drive capability) i amp = -500a avdd=3.3v v amp, max 2.8 v 4 minimum output voltage (tia drive capability) i amp = +500a v amp, min 0.5 v 5 common mode rejection rate ? vout_tia_cm / ? v out_tia_dm @22khz cmrr 80 db 6 internal feedback capacitor of transimpedance amplifier 1) cf 2.25 pf 7 -3db corner frequency tia f cs 600 khz table 5: electrical parameters transimpedance amplifier 4.3 gyrator no. description condition symbol min typ max unit 1 voltage drop at low-side gyrator input (a) i a = 10ma v a - v ggind 0.75 1.0 1.25 v 2 voltage drop at high-side gyrator input (c) i c = -10ma v gvdd - v c 0.75 1.0 1.25 v 3 max. photo current i photo 10 ma table 6: electrical parameter gyrator 4.4 linear amplifier no. description condition symbol min typ max unit 1 gain linear amplifier g 0, lin -10 v / v 2 maximum output voltage i lin = -500a avdd = 3.3v v lin,max 2.3 v 3 minimum output voltage i lin = +500a v lin,min 1.0 v 4 -3db corner frequency f cs 600 khz table 7: electrical parameters linear amplifier 1) not tested in production test elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 7 of 13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 4.5 high pass filter and limiting amplifier no. description condition symbol min typ max unit 1 differential gain a vout_la = (outp_la - outn_la) / amp gain_ctrl = 0 av outl0 (av outl1 ) 2) v / v 2 differential gain a vout_la = (outp_la - outn_la) / amp gain_ctrl = 1 av outl1 65 v / v 3 maximum output voltage 2) i outp_la = -10a v outp_la,max avdd - 0.1 v 4 minimum output voltage 2) i outp_la = -10a v outp_la,min avdd - 1.1 v 5 single ended output resistance 1) 2) r outn_la 1.5 k ? 6 -3db corner frequency high pass filter 1) f g 15 khz 7 overall gain (tia +la) 1) gain_ctrl=0 io_ctrl = 0 gr tia * av outl0 m ? table 8: electrical parameter high pass filter and limiting amplifier 4.6 digital control inputs no. description condition symbol min typ max unit 1 input low level (pin on, on_la) v il 0.8 v 2 input high level (pin on, on_la) v ih avdd- 0.8 v 3 settling time after switching on the limiting amplifier 1) on_la="0" "1" t son 1s 4 settling time after switching from sleep to operating mode 1) t sw 500 s 5 pull down resistor 1) r pd 800 1600 k ? table 9: electrical parame ters digital control inputs 1) not tested in production test 2) for proper operation, the output pins outn_la & outp_la must be decoupled with capacitors close to the e909.07. the load at these output pins shall be a load against ground. elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 8 of 13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 5 functional description 5.1 brief functional description the e909.07 is transimpedance amplifier with high am plification. the differential inputs inn, inp and the differential limiting outputs outp_la, outn_la are forming the main signal path. within the application field of optical receiver systems it uses a photodiode as input signal source. the differential outputs are designed for use in halios? optical detector systems. the total transimpedance figure in this path is 200m ? minimum. together with the halios? chip set e909.05/ e909.06 motion detectors with a detection range of several meters can be realized. by switching the output to high impedance state several optical receivers for multiple input channels can be multiplexed to one input of a halios? sensor ic e909.05/e909.06, which enables a very economical construction of multi sensor systems with multiple optical detector nodes. these can be operated at minimum power consumption by use of the sleep- mode feature of the e909.07 (controlled by pin on) 5.2 supply the input gvdd, avdd should be low pass filtered to increase ambient light suppression and emc robustness. 5.3 transimpedance amplifier the current input signal from an external differential source connected between inn and inp - typically a photodiode - is amplified in a first stage transimpedance amplifier (tia) with a typical transimpedance figure of 100k ? . the input photodiode has to be ac-coupled to the inputs by capacitors (c inn , c inp ). the output of this tia-stage is accessible at terminal amp. in order to achieve a good suppression of common mode disturbances at the pins c and a, the ac coupling capacitors c inn , c inp should have a very good matching. 5.4 gyrator gyrator input stages at nodes c (cathode) and a (anode) are used to define the input operating point of the input photo diode properly. these gyrators are designed for a maximum dc current of 10ma (photo current) which corresponds to a very high level of ambient light applied to the photo diode. when the device is switched off (on = 0) the gyrator is also switched off. 5.5 linear amplifier additionally to the limiting amplifier output an inverti ng amplifier output with an amplification factor of typ. -10 (20db) is available and can be routed into the signal path. this results in a total transimpedance of typ. 2m ? at out with respect to the input of the tia. 5.6 high pass filter and limiting amplifier the limiting amplifier consists of six differential amplifier stages. at the input and after the third stage a high pass filter is placed. thus the frequency behaviour between the limiting amplifier input in_la and the outputs outp_la, outn_la can be described with a second order high pass filter. these stages provide symmetrical outputs at outp_la, outn_la which are inverted with respect to each other. the differential gain (in the linear range) from the input of limiting amplifier (amp) to the output (outp_la - outn_la) has a typ. value of +4225. in case of input overdrive excessive phase shift is elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 9 of 13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 avoided by the limiting amplifiers. the outputs outp_la, outn_la are source follower outputs, which buffer the last differential stage of the limiting amplifier. the external load at these outputs should not be smaller than 10k, to avoid reduction of the output swing. the maximum output voltage swing has a typical value of 1v. the limiting outputs can be switched to high impedance by us e of control input on_la. this allows output multiplexing of several amplifier devices, e.g. in multi-sensor systems. using the input on_la during multiplex mode to switch between the channels of several e909.07 switching times of 1s can be realized. 5.7 digital control inputs four control inputs are provided: ? on_la enables the limiting amplifier and activate s the outputs outp_la, outn_la by closing the switch between the limiting amplifier and the output pins when pulled to high level. an internal pull down keeps the outputs in off mode (high impedance) when the pin is left open. if on_la is 0 the outputs are in high-impedance state. ? input on is used to switch the device from operating mode to sleep mode. the device is active, when on is pulled high to supply voltage avdd. with on = 0, the all components in the devices are switched off and the current consumption drops to almost zero. an internal pull-down will hold the device in sleep mode when the pin is left open. ? input gain_ctrl allows to reduce the amplification factor of the limiting amplifier by bypassing one of the two amplification stages. ? with gain_ctrl = 0 both stages are active, the amplification factor has its maximum value. ? with gain_ctrl = 1 one amplifier stage is bypassed thus reducing the amplification factor by a factor of 2. ? input io_ctrl allows to disconnect the tia output from the pin amp. then it is possible to control the limiting amplifier with an external signal. in all cases, the tia is connected to the linear amplifier. ? io_ctrl = 0: the output of the transimpedance amplifier (tia) is connected to the input of the limiting amplifier. the tia output signal is av ailable on the pin amp which is of type output. ? io_ctrl = 1: the output of the transimpedance amplifier is disconnected from the input of the limiting amplifier. pin amp is th e input of the limiting amplifier. pin status description on_la 0 outputs outp_la, outn,la are inactive (high resistance state) 1 on 0 sleep mode 1 operating mode gain_ctrl 0 both amplification stages are active, the amplification factor has its maximum value 1 the second amplification stage is bypassed io_ctrl 0 tia output connected to input of limiting amplifier 1 tia output disconnected to input of limiting amplifier. limiting amplifier could be controlled by external signal (amp) table 10: table of digital control inputs elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 10 of 13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 6 esd, latch up and emc 6.1 electro static discharge (esd) standard aec-q100-002 model human body model capacitance 100 pf resistance 1,5 k ? minimum withstand voltage +/- 2 kv supply and interface pins (outp_la, outn_la, ggnd, agnd_la, agnd, gvdd, avdd_la, avdd) +/- 4 kv table 11: esd on ic level, human body model (hbm) standard aec-q100-011 model charged device model resistance 1 ? minimum withstand voltage +/- 500 v pulse rise time (10%-90%) <400 ps table 12: esd on ic level, charged device model (cdm) 6.2 latch-up latch-up performance is validated according jedec standard jesd 78 in its valid revision. 6.3 emc the contents of this chapter were not specified yet! elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 11 of 13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 7 package information the e909.07 is available in a pb free, rohs compliant qfn20l4 plastic package, for this exposed pad size is no variant within jedec mo-220 k available. the package is classified to moisture sensitivity level 3 (msl 3) according to jedec j-std-020 with a soldering peak temperature of (260+5)c. description symbo l mm inch min typ max min typ max package height a 0.80 0.90 1.00 0.031 0.035 0.039 stand off a1 0.00 0.02 0.05 0.000 0.00079 0.002 thickness of terminal leads, including lead finish a3 -- 0.20 ref -- -- 0.0079 ref -- width of terminal leads b 0.18 0.25 0.30 0.0071 0.0098 0.012 package length / width d / e -- 4.00 bsc -- -- 0.157 bsc -- length / width of exposed pad d2 / e2 2.50 2.65 2.80 0.098 0.104 0.110 lead pitch e -- 0.50 bsc -- -- 0.020 bsc -- length of terminal for soldering to substrate l 0.35 0.40 0.45 0.014 0.016 0.018 number of terminal positions n 20 20 note: the mm values are valid, the inch values contains rounding errors elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 12 of 13
transimpedance amplifier with high sensitivity e909.07 production data C mar 25 , 2014 warning ? life support applications policy elmos semiconductor ag is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to phys ical stress. it is the responsibility of the buyer, when utilizing elmos semiconductor ag products, to observe standards of safety, and to avoid situations in which malfunction or failure of an elmos semiconductor ag product could cause loss of human life, body injury or damage to property. in the development of your design, please ensure that elmos semiconductor ag products are used within specified operating ranges as set forth in the most recent product specifications. general disclaimer information furnished by elmos semiconductor ag is believed to be accurate and reliable. however, no responsibility is assumed by elmos semiconductor ag for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of elmos semiconductor ag. elmos semiconductor ag reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manufacturability . application disclaimer circuit diagrams may contain components not manufactured by elmos semiconductor ag, which are included as means of illustrating typical applications. consequently, complete information sufficient for construction purposes is not necessarily g iven. the information in the application examples has been carefully checked and is believed to be entirely reliable. however, no responsibility is assumed for inaccuracies. furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of elmos semiconductor ag or others. contact information headquarters elmos semiconductor ag heinrich-hertz-str. 1 ? d-44227 dortmund (germany) ? : +492317549100 ? : sales-germany@elmos.com ? : www.elmos.com sales and application support office north america elmos na. inc. 32255 northwestern highway ? suite 220 farmington hills mi 48334 (usa) ? : +12488653200 ? : sales-usa@elmos.com sales and application support office korea and japan b-1007, u-space 2, #670 daewangpangyo-ro, sampyoung-dong, bunddang-gu, sungnam-si kyounggi-do 463-400 korea ? : +82317141131 ? : sales-korea@elmos.com sales and application support office china elmos semiconductor technology (shanghai) co., ltd. unit london, 1bf gc tower ? no. 1088 yuan shen road, pudong new district ? shanghai, pr china, 200122 ? : +862151785178 ? : sales-china@elmos.com sales and application support office singapore elmos semiconductor singapore pte ltd. 3a international business park #09-13 icon@ibp ? 609935 singapore ? : +65 6908 1261 ? : sales-singapore@elmos.com ? elmos semiconductor ag, 2013. reproduction, in part or whole, without the prior written consent of elmos semiconductor ag, is prohibited. elmos semiconductor ag reserves the ri g ht to chan g e the detail s p eci f ications as ma y be re q uired to p ermit im p rovements in the desi g n o f its p roducts. elmos semiconductor ag data sheet qm-no.: 25ds0047e.04 page 13 of 13

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